SILICON TRANSISTOR
2SC2351
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. P10350EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
1984
FEATURES
NF 1.5 dB TYP. @ f = 1.0 GHz
MAG 14 dB TYP. @ f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage V
CBO
25 V
Collector to Emitter Voltage V
CEO
12 V
Emitter to Base Voltage V
EBO
3.0 V
Collector Current I
C
70 mA
Total Power Dissipation P
T
250 mW
Junction Temperature T
j
150
C
Storage Temperature T
stg
-
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current I
CBO
0.1
A
V
CB
= 15 V, I
E
= 0
Emitter Cutoff Current I
EBO
0.1
A
V
EB
= 2.0 V, I
C
= 0
DC Current Gain h
FE
40 200 V
CE
= 10 V, I
C
= 20 mA
Gain Bandwidth Product f
T
4.5 GHz V
CE
= 10 V, I
C
= 20 mA
Output Capacitance C
ob
0.75 1.0 pF V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21
e
2
9
11
dB
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure NF 1.5 3.0 dB V
CE
= 10 V, I
C
= 5 mA, f = 1.0 GHz
Maximum Available Gain MAG 14 dB V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
h
FE
Classification
Class E/P * F/Q *
Marking R2 R3
h
FE
40 to 120 100 to 200 * Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.80.2
2.90.2
1.1 to 1.4
0 to 0.1
0.95
0.3
0.95
0.4
+0.1
-
0.05
0.4
+0.1
-
0.05
0.16
+0.1
-
0.06
0.65
+0.1
-
0.15
2
2SC2351
TYPICAL CHARACTERISTICS (T
A
= 25
C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
h
FE
-DC Current Gain
1
2
5
10
20
50 70
0.5
10
20
30
50
100
200
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
f
T
-Gain Bandwidth Product-GHz
1
2
5
10
20
50 70
0.5
0.1
0.2
0.5
1
2
5
7
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
V
CB
-Collector to Base Voltage-V
C
ob
-Output Capacitance pF
0.5
1
2
5
10
20
30
0
0.3
0.5
1
2
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
-Base to Emitter Voltage-V
I
C
-Collector Current-mA
0.6
0.7
0.8
0.9
0.5
0.5
1
2
5
10
20
50
70
INSERTION GAIN vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
|S
21e
|
2
-Insertion Gain-dB
1
2
5
10
20
50 70
0.5
0
5
10
15
V
CE
= 10 V
V
CE
= 10 V
f = 1.0 MHz
NOISE FIGURE.
COLLECTOR CURRENT
I
C
-Collector Current-mA
NF-Noise Figure-dB
1
2
5
10
20
50 70
0.5
0
1
2
3
4
5
7
6
V
CE
= 10 V
V
CE
= 10 V
f = 1.0 GHz
V
CE
= 10 V
f = 1.0 GHz
3
2SC2351
NF, Ga vs. COLLECTOR CURRENT
I
C
-Collector Current-mA
NF-Noise Figure-dB
G
a
-Associated Gain-dB
1
3
5
7 10
30
0
0
5
10
V
CE
= 10 V
f = 1 GHz
1
2
3
4
5
6
Ga
NF
2SC2351
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M4 96. 5
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